Method and apparatus for preparing nitride semiconductor surfaces

ABSTRACT

Semiconductor nitride layers are produced using a corona discharge supersonic free-jet source producing an activated nitrogen molecule beam impacting a semiconductor substrate in the presence of a group III metal or impacting an oxide layer on a semiconductor substrate. The activated nitrogen molecules are of the form N 2 A 3 Σ u   + . Apparatus for producing the nitride layer on the substrate includes the corona discharge free-jet source, a skimmer to collimate the N 2  beam and succeeding stages interconnected by collimators and evacuated to draw off background gases.

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] Priority is claimed from U.S. provisional patent application Serial No. 60/213,149 filed Jun. 22, 2000 of R. Bruce Doak, Dirk C. Jordan and Christopher T. Burns. That application is incorporated herein by reference.

STATEMENT OF GOVERNMENT SUPPORT

[0002] Financial assistance was provided by the U.S. Government under Grant Number N00014-96-1-0962 of the U.S. Office of Naval Research, and the United States Government may own certain rights to this invention.

FIELD OF THE INVENTION

[0003] This invention relates to the preparation of nitrogen containing films on substrates and more particularly to preparation of nitride films on semiconductors by introducing nitrogen into a corona discharge, thereby to produce activated nitrogen molecules for application to the substrate.

BACKGROUND OF THE INVENTION

[0004] Rapid progress has been realized in semiconductor technology related to the growth of group III metal-nitride films (III-N). Metal-organic vapor-phase epitaxy (MOVPE) has emerged as the leading “III-N” growth process, generally utilizing ammonia and trimethylmetallics as the precursors for nitrogen and group III metals, respectively. In contrast, and despite potential advantages over MOVPE, progress in molecular beam epitaxy (MBE) of III-N semiconductors has been slow. MBE offers a pristine UHV growth environment, a precise control over layer-by-layer composition, the ability to monitor growth in situ via standard surface science tools, and a wide choice of sources. For III-N growth, the latter include effusive or supersonic jets of MOVPE species, discharge sources of activated nitrogen gas, and evaporation sources of high purity metals.

[0005] AlN, GaN, and InN are emerging as materials of choice for wide band gap semiconductor devices. Despite the remarkable advances in III-N fabrication, further improvements of growth processes are needed.

BRIEF SUMMARY

[0006] In accordance with this invention, certain electronically-excited (or “activated”) nitrogen molecules are used as an ideal nitride precursor. This invention provides a method of producing N₂A³Σ_(u) ⁺ in essentially a pure state as the sole excited species in a molecular beam whose only other component is ground state nitrogen. Through the use of this method, a high purity, high energy form of nitrogen is produced that when used in III-N fabrication, greatly improves upon both the quality and consistency of metal-III nitride and its production control. This method enables metal-III nitride film production to take advantage of the above discussed benefits of MBE. (The terms “film” and “layer” are used interchangeably herein with no distinction intended.)

[0007] A corona discharge supersonic free-jet (CD-SFJ) source has been constructed, characterized, and operated to grow III-N nitride semiconductor films via molecular beam epitaxy (MBE) using A³Σ_(u) ⁺N₂, an electronically-excited metastable molecule. By “metastable” is meant molecules having a lifetime in their activated state sufficient to bring them to a location where nitride film growth occurs. The CD-SFJ yields A³Σ_(u) ⁺ molecules as the sole activated species in a molecular beam otherwise containing only X¹Σ_(g) ⁺ ground state nitrogen molecules plus a negligible quantity of ⁴S⁰ ground state nitrogen atoms. The generated beam has been used as a nitrogen source to epitaxially grow metal-nitride (III-N) films via this rich content of excited metastable nitrogen molecules. Optical emission spectroscopy of the free-jet expansion reveals the expected cascade through the excited state manifold of N₂ triplet states to populate the A³Σ_(u) ⁺ metastable state. Appearance potential spectroscopy (mass spectrometer detector ionization yield, measured as a function of electron impact energy) explicitly establishes the fraction of all activated nitrogen species in the terminal beam, including non-emitting metastable species such as the A³Σ_(u) ⁺ state. Metastable A³Σ_(u) ⁺ molecules are present at up to 1.6% number fraction even several meters from the source, providing a beam intensity of 8.5×10¹⁶ metastables sr⁻¹s⁻¹. Growth studies confirm that A³Σ_(u) ⁺ does incorporate very efficiently into a growing GaN thin film.

[0008] The electronically excited A³Σ_(u) ⁺ nitrogen molecules couple to the ground state solely via the forbidden Vegard-Kaplan bands. The A³Σ_(u) ⁺ lifetime is therefore very long, circa one second, and far greater than beam transit times through a molecular beam apparatus. Consequently, A³Σ_(u) ⁺ molecules are metastable insofar as molecular beam chemistry is concerned, and can be employed in molecular beam epitaxy (MBE) in the fashion of any stable beam species. The suggested use of N₂A³Σ_(u) ⁺ to grow GaN is based on two facts: (1) being an electronically excited state, A³Σ_(u) ⁺ is reactive (“activated”), and (2) being molecular rather than atomic, A³Σ_(u) ⁺ delivers two atoms simultaneously to the surface. Thereby, in a dissociative chemisorption reaction, one of these two atoms can bind to the surface while the second carries away the heat of reaction as kinetic energy. As a result, the strong exothermicity of the III-N reaction need not be dissipated through the growing III-N film. Nitrogen accommodation is enhanced and sputtering damage minimized, to yield high quality films at a growth rate limited only by the flux at which the metastable molecules are supplied to the film.

[0009] Many different varieties of plasma sources, often incorporating supersonic jet techniques, have been employed to “activate” nitrogen for III-N growth. These have included radio frequency (RF) discharges, microwave discharges, electron cyclotron resonance (ECR) discharges, various arc-jet discharges, and hollow anode plasma discharges. Invariably, these sources produce a broad spectrum of both atomic and molecular excited states and often ionic states as well. In marked contrast, a corona discharge supersonic free-jet expansion can yield predominantly the long-lived metastable N₂A³Σ_(u) ⁺ state and in appreciable quantities. As such it becomes the primary candidate for testing GaN growth via A³Σ_(u) ⁺ nitrogen molecules.

[0010] The above and further objects and advantages of the invention will be better understood with reference to the following Detailed Description taken in consideration with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

[0011]FIG. 1 is a diagrammatic illustration of a supersonic corona discharge source for use in depositing activated nitrogen molecules on a substrate.

[0012]FIG. 2 is a fragmentary diagrammatic illustration of an alternative embodiment of the supersonic corona discharge source of FIG. 1.

DETAILED DESCRIPTION

[0013] In FIG. 1, a corona discharge supersonic free-jet source 20 has a quartz tube 22 (6 mm O.D., 4 mm I.D.), which has been heated and drawn to closure then ground back to form a nozzle orifice 23 with diameter of 200 μm as measured by an optical comparator. The tube 22 is mounted in a ¼″ Swagelock cross 25 to allow as one electrode a tungsten or rhenium corona wire 26 (diameter 0.25 mm) to be inserted via a high voltage feedthrough 28 welded into the opposing leg of the cross. Source gas enters through one transverse leg 29 of the cross 25 as indicated at 31. The opposing leg 33 serves as the means of mounting the cross on a ¼″ stud 34, all within a source vacuum chamber 36. The nozzle was operated at a stagnation pressure of typically 200-440 Torr, producing a background pressure of 1×10⁻⁶ torr in the source vacuum chamber 36 pumped by an 18,000 l/s diffusion pump 37. A circular auxiliary electrode 38 was positioned just downstream of the nozzle, outside of the free-jet boundary, to provide a point of attachment for the corona discharge. The discharge can be operated with the corona wire 26 either positive or negative with respect to the circular electrode 38. A current limited high voltage supply 39 to the corona wire was ballasted with a 250 kΩ 7 series resistor 41. Under these conditions a voltage of 4-6 kV applied to the corona wire produces a discharge current of 6-18 mA and results in a readily discernible bright plume at the tip of the nozzle as diagrammatically shown at 42. The turn-on procedure is as follows. The source gas is raised to the desired pressure. The current limit of the high voltage power supply to the corona wire 26 is set to the desired discharge current. The voltage is raised until the discharge initiated, whereupon the current jumps immediately to the current limit, placing the power supply in its current-limited mode. Once the discharge is struck, the emission current can be adjusted within bounds determined by the IV characteristics of the discharge.

[0014] A custom-made refractory graphite skimmer 40, with a diameter 0.75 mm opening 43 at its apex, extracts the isentropic core of the free-jet plasma expansion to form a molecular beam. Skimmers of the kind used here are described in D. C. Jordan, R. Barling and R. B. Doak, Refractory Graphite Skimmers for Supersonic Free-jet, Supersonic Arc-jet, and Plasma Discharge Applications, 70 Rev. Sci. Instrum. 1640 (1999), incorporated herein by reference, and in U.S. provisional patent application Serial No. 60/092,815 of Jordan, Barling and Doak, filed Jun. 8, 1998, also incorporated herein by reference. The shape and the very sharp edge of the front of the skimmer allow a shock wave to attach to the front of the skimmer. In this aerodynamic flow configuration, the central portion of the beam passes into and through the skimmer without being influenced by the skimmer edge. Further downstream of the skimmer, where the beam density is much less, simple apertures in flat plates can be used as collimators 52--52 _(n) for further collimation of the beam. Downstream of the skimmer, several differentially pumped stages 44--44 _(n) lead to a deposition chamber 46 where controlled growth can take place under UHV molecular beam epitaxy (MBE) conditions.

[0015] The differential pumping is employed to ensure that essentially only the collimated, directed beam provides reactants to the surface 49 of a target substrate 50 supported in a final chamber 46 by a suitable means for locating the substrate as is diagrammatically indicated at 51. Background gases in the various vacuum chambers 44--44 _(n) also flow through a series of collimators 52--52 _(n) separating one chamber from the next. As mentioned, these may be simply small openings in the wall separating one chamber from another or one or more may be a skimmer similar to the skimmer 40. There occurs what is called “effusion” of the background gas. Entering a chamber background gas is broadly distributed in angle (spread of about 100 deg) in contrast to the directed beam (about 0.5 deg). By using the several vacuum chambers 44--44 _(n) in series, with each separated from the next by a small collimator 52--52 _(n), this effusive flow can be markedly reduced with no effect whatsoever on the directed beam. The collimators are all carefully aligned in a straight line so that the directed beam, which is smaller in diameter than the collimators, passes through them unhindered. This produces “differential pumping” to reduce the background gas pressure and the background effusion from one differential pumping stage to the next. The decrease in chamber pressures proceeding downstream from the source is the desired result, but is not adjusted, per se, other than by setting the size of the apertures and the size of the vacuum pump 54--54 _(n) in each differential pumping section. Depending on the need in a particular application, greater or lesser elimination of effusion of the background gas may be required requiring more or fewer of the stages 44--44 _(n). Typically, the pressure might be 0.0001 torr in the source chamber, 0.0000001 torr in the next chamber, and decrease by a factor of {fraction (1/10)} in each subsequent differential pumping section. All of these background pressures are sufficiently low to result in no significant attenuation of the directed beam due to scattering from the background gas molecules as the beam passes through each differential pumping chamber.

[0016] Photographs of typical corona discharge plumes are provided in FIG. 2 of the above-identified provisional application Serial No. 60/213,149 that is incorporated by reference. The appearance of the plume depended strongly on the polarity of the corona wire. The “positive” corona discharge (i.e., the corona wire held positive with respect to the circular guard electrode) ran at lower discharge current but somewhat higher voltage than the “negative” corona. The positive corona developed a bright purple-violet plasma plume whereas the negative corona plume was orange and less luminous. The positive corona was interrupted by continual flickering and sparking while the negative discharge was steady and stable.

[0017] Apart from its very high initial gas temperature (several thousand degrees), a CD-SFJ is similar to any supersonic free-jet. Its state specificity derives from rapid cooling within the free-jet expansion. The corona discharge is struck within the nozzle tube, upstream of the nozzle throat. As the gas expands through the throat into high vacuum, the rapid decrease in free-jet density terminates the discharge within a few nozzle diameters of the throat. The expansion itself, however, continues much farther downstream. This depopulates excited states, both by collision-induced relaxation within the continuum portion of the expansion and by spontaneous radiative relaxation in the free molecular flow regime further downstream. With proper selection of discharge power, corona polarity, nozzle stagnation pressure, and nozzle diameter, all but long-lived metastable species return to the ground state. The manifold of N₂ triplet excited states cascades down to collect in the metastable A³Σ_(u) ⁺ state, leaving only this plus the N₂X¹Σ_(g) ⁺ ground state in the terminal beam. “Skimming” and collimating the expansion forms a molecular beam of these two species.

[0018] The relevant excited species in a CD-SFJ of molecular nitrogen are the N₂ triplet states A³Σ_(u) ⁺, B³II_(g), C³II_(u), and W³Δ_(u). Other molecular excited states can also be present, as can Rydberg states. Due to small excitation cross sections and/or short lifetimes, however, these other states play no significant role. Electron impact excitation cross sections for the N₂ triplet states are listed in Table I. Radiative lifetimes are presented for representative vibrational levels of these species. The excitation cross sections peak at a fraction of 1 Å² at electron impact energies of 12-18 V. TABLE I Top two rows: Maximum integral cross sections for excitation of relevant N₂ species and electron impact voltage at which maximum occurs. Following rows: Representative radiative lifetimes of species in various vibrational levels. Excited Species A³Σ_(u) ⁺ B³Π_(g) C³Π_(u) W³Δ_(u) Max. Excitation 0.225 Å² 0.299 0.443 Å² 0.380 Å² Cross Section Å² Electron Impact Voltage 17 V 12 V 14 V 16 V Radiative Lifetime, υ =0 1.3/2.5 s 8-13 μs 36-39 ns 4/32 s Radiative Lifetime, υ =1 1.3 s 8-11 μs 36-39 ns 4.5 ms Radiative Lifetime, υ =2 1.3 s  7-9 μs 37-38 ns 1.2 ms Radiative Lifetime, υ =3 1.4 s  7-8 μs 38 ns 600 μs Radiative Lifetime, υ =4 1.4 s  6-7 μs 36-39 ns 370 μs Radiative Lifetime, υ =8 1.4 s   5 μs — 130 μs

[0019] The terminal beam velocity for the current CD-SFJ pure N₂ was measured to be 2100 m/s under typical source settings. At this speed, and given the lifetimes of Table I, the A³Σ_(u) ⁺ state will survive for kilometers and will clearly be present in the terminal beam. In contrast, C³II_(u) will relax spontaneously within a few microns of its point of excitation. The B³II_(g) state will survive for only a few centimeters. The W³Δ_(u) state might survive into the terminal beam. Re-excitation processes can alter these simple relaxation trends. The W³Δ_(u) vibrational levels overlap with those of the A³Σ_(u) ⁺ and B³II_(g) and relax via a cascade through these latter states. This repopulates the B³II_(g) states and gives rise to a long-lived afterglow on the B→A emission lines. Although this decay cascade is accelerated by collisions of excited N₂ with other beam species or with background gases, the low vibrational levels of W³Δ_(u) and (transiently) B³II_(g) might still be present far downstream of the discharge.

[0020] The incorporated by reference provisional application Serial No. 60/213,149 reports on time-of-flight energy analysis, optical emission spectroscopy, and appearance potential spectroscopy for beams created by a CD-SFJ as described herein. Pitot (stagnation pressure gauge) measurements of beam flux are there reported as are measurements of relative fractions of N₂A³Σ_(u) ⁺ excited state and N₂x¹Σ_(g) ⁺ ground state in the terminal beam. Beams of 100% nitrogen as well as mixtures of 10% and 20% mole fraction N₂ in A_(r) are discussed there. Pitot measurements of absolute beam intensity are described, as are emission spectra from negative and positive CD-SFJ plumes. Both non-disassociative and disassociative ionization is investigated by appearance potential spectroscopy and reported upon.

[0021] For the purposes of nitride layer growth, it is the flux of excited molecular species in the terminal beam which is significant. From the measured beam fractions of the excited states and with absolute pitot measurements of the terminal beam intensity, the appropriate excited state fluxes at any desired working distance from the source are easily computed. Values are compiled in Table II for the 64 cm source-to-target distance of the current experimental configuration. Fluxes of a few tenth of one monolayer per second are readily achieved. As already apparent in FIGS. 5a and 6 a of the provisional patent application, Serial No. 60/213,149, the beam fraction and therefore the flux of excited species increases significantly with increased discharge current. Optimum fluxes were obtained with a new graphite skimmer having the sharpest possible leading edge. Yet even upon averaging over 100 hours of operation, the average flux decreased by less than a factor of two from this optimum. This flux suffices for a growth rate of one to several hundred Angstrom per hour. This can be increased in one of several ways as mentioned below. This rate is, nevertheless, sufficient for production of certain semiconductor substrate and nitride layer capable of use in a semiconductor device, including but not limited to ultrathin transistor gate dielectrics of high dielectric constant as discussed further below.

[0022] CD-SFJ beams of argon/nitrogen mixtures also readily yielded the N₂A³Σ_(u) ⁺ state. In fact, with a negative corona discharge and 20% mole fraction mixture of nitrogen in argon, the flux of excited species was essentially the same as with 100% nitrogen gas. Since the nitrogen velocity in this dilute “seeded” beam is lower by roughly (m_(Ar)/m_(N2))^(½), it follows that the absolute density of excited states must be even higher in the mixture than in the pure nitrogen beam. The metastable flux decreases at concentrations both higher and lower in nitrogen than the 20% mixture. Measurements were made down to 10% nitrogen/argon mixture, below which there was insufficient intensity to record accurate APS curves.

[0023] Using the CD-SFJ source of N₂A³Σ_(u) ⁺, AlN and GaN films were grown on Si(100) and 6H—SiC(0001), Ga and Al being supplied from effusive sources indicated schematically at 56. TABLE II Flux of excited molecular nitrogen from CD-SFJ source as extracted from appearance potential spectroscopy and pitot measurements. Two values listed for 100% N₂ at 18 mA, corresponding to measurement with a pristine skimmer (best achievable flux with current apparatus, first row) and an average over 27 actual deposition runs totaling 110 hours (second row). Excited Beam Discharge Beam Intensity Excited Species Current Fraction (10¹⁸ Flux Gas Polarity (mA) (%) #/sr/s) (10¹³ #/cm²/s) 100% N₂ Neg. 18 (best) 1.74 6.47 2.75 ″ ″ 18 (avg) 1.68 4.30 1.67 ″ ″ 14 0.88 6.66 1.43 ″ ″ 11 0.80 6.04 1.18 ″ ″ 8 0.61 5.75 0.85 ″ Pos. 6 1.04 1.84 0.47 20% N₂/Ar Neg. 18 4.96 1.20 1.45 60% N₂/Ar ″ 18 2.71 1.48 0.98

[0024] GaN was also grown on AlN buffer layers deposited in situ on SiC. The highest incorporation efficiencies and best epitaxial interfaces were obtained with a metal/nitrogen flux ratio of approximately 1.25. Growth rates with the current CD-SFJ source were 70 to 120 Å per hour. Over 30 separate deposition runs of various duration and source settings were carried out to produce films ranging in thickness from 300 to 900 Å. The films were characterized ex situ by Rutherford backscattering spectrometry (RBS), scanning electron microscopy (SEM), electron channeling pattern (ECP), atomic force microcopy (AFM), and transmission electron microscopy (TEM). The measured incorporation efficiency (N atoms attaching per incident N₂ molecule) approached 100% and was independent of the substrate temperature from 600 to 900° C. A heat (or cooling) source 61 may be incorporated as needed in the CD-SFJ to arrive at and maintain the desired temperature. Direct molecular chemisorption seems to be the underlying growth mechanism. Both hexagonal and cubic GaN films could be grown with an abrupt, well ordered epitaxial interface on 6H-SiC(0001) and with good crystallinity in the film. Good epitaxial interfaces were obtained even when GaN was grown directly on SiC.

[0025] The described corona discharge metastable nitride source can be used to apply a nitride layer to a multilayer substrate. For example, the substrate may comprise a semiconductor stratum, of for example Si or Se, and an epitaxial oxide layer on which the nitride layer may be grown.

[0026] The described corona discharge metastable nitrogen source can be used to grow silicon oxynitride gate dielectrics. As in the growth of GaN and AlN epitaxial films, the dissociative reaction of the metastable nitrogen molecules will promote efficient local attachment of the nitrogen within the growing dielectric film, allowing growth of oxynitride films of any desired composition profile. This is important to current semiconductor devices, the further miniaturization of which will be limited in the very near future (ca. 2006) by the properties of the silicon oxide gate dielectrics that are currently the industry standard.

[0027] The corona discharge free-jet source described produces an average N₂A³Σ_(u) ⁺ metastable intensity of 7×10¹⁶ metastables sr⁻¹ s⁻¹, two orders of magnitude higher than intensities reported for rare gas metastables. Growth studies verify that N₂A³Σ_(u) ⁺ is a very efficient nitrogen reactant for MBE growth of III-N semiconductor thin films. For commercial growth, an increase in N₂A³Σ_(u) ⁺ flux of at least one order of magnitude would be desirable. Similarity laws for glow discharges suggest that this might be realized by simply decreasing the diameter of the CD-SFJ nozzle and operating at higher nozzle stagnation pressure. Specifically, the concentration of metastables produced in a single stage glow discharge excitation is predicted to change by a factor of a⁻² if the linear dimensions of the discharge are increased by a factor of a. To maintain similarity under the new source dimensions, the stagnation pressure p of the discharge must be changed by a factor of a⁻¹. Since the throughput of the supersonic nozzle scales as roughly p d², the metastable concentration in the CD-SFJ is expected to scale as a⁻¹. If these similarity laws apply, the metastable throughput will be increased by decreasing the linear dimensions of the source and raising the nozzle pressure proportionally.

[0028] An extension, both for purposes of increased intensity and for beam uniformity, would be to employ an array of miniature CD-SFJ nozzles and to skim with a very large diameter skimmer. Glass capillary tubing is easily “pulled” to rupture at a neck diameter of under 1 μm and miniature nozzle tubes fabricated in this fashion could be bundled to form a nozzle array. Even smaller sized nozzle tubes have been formed in this laboratory by pulling hollow core optical fibers (375 μm O.D.×15 μm I.D.) and these have been demonstrated to yield high speed ratio supersonic free-jets. In corona discharge applications, joule heating at a given discharge current will ultimately set the minimum diameter of the corona wire and therefore the inner diameter of the nozzle tube. Additional CD-SFJ intensity might also be obtained by terminating the corona discharge not on an external guard anode, as in the current experiments, but on the skimmer itself. This is diagrammatically illustrated in FIG. 2. Neuschäfer et al., at 117 Chem. Phys. 133 (1987), incorporated herein by reference, report being able to achieve somewhat higher intensities in this fashion, albeit at a cost in simplicity, dependability, and skimmer lifetime.

[0029] Although preferred embodiments of the invention have been described in detail, it will be readily appreciated by those skilled in the art that further modifications, alterations and additions to the embodiments disclosed may be made without departure from the spirited scope of the invention. 

1. A method of producing nitride films comprising: (a) providing first and second electrodes, (b) applying a voltage between said first and second electrodes to establish a corona discharge therebetween, (c) introducing nitrogen into the corona discharge under pressure to activate the nitrogen and to direct the activated nitrogen toward a substrate, and (d) applying the activated nitrogen to the substrate in the presence of at least one further element to form a nitride film.
 2. The method according to claim 1, wherein the one further element is selected from the group consisting of Al, Ga and In.
 3. The method according to claim 2, wherein step (d) comprises introducing the at least one further element to the substrate at the location of application of the activated nitrogen to the substrate.
 4. The method according to claim 1, wherein, in step (d) the at least one further element is oxygen and the nitride film thus formed is an oxynitride film.
 5. The method according to claim 1, wherein the substrate is a semiconductor stratum having an oxide layer thereon and step (d) comprises applying the activated nitrogen to the oxide layer.
 6. The method according to claim 5, wherein applying the activated nitrogen to an oxide layer on the semiconductor stratum comprises providing a silicon stratum having an oxide layer for contact by the activated nitrogen.
 7. The method according to claim 1, wherein step (c) comprises passing the nitrogen through a corona discharge to create metastable activated nitrogen molecules.
 8. The method according to claim 7, wherein the metastable activated nitrogen molecules thus created are of the form N₂A³Σ_(u) ⁺.
 9. The method according to claim 7, wherein the metastable activated nitrogen molecules are diatomic molecules, and step (d) comprises reacting one atom of the diatomic molecules with the at least one further element and disassociating the other atom of the diatomic molecules to remove heat of the reaction.
 10. A nitride coated substrate produced by the method of claim
 1. 11. A semiconductor device having a coated substrate produced by the method of claim
 1. 12. An apparatus for producing nitride films comprising: (a) a pair of corona-discharge producing electrodes, (b) a nitrogen delivery path leading to a location at which the electrodes produce a corona discharge, and (c) means to locate a substrate for deposition thereon of nitrogen activated by the corona discharge.
 13. The apparatus according to claim 12, further comprising a nozzle with a nitrogen emersion orifice in the nitrogen delivery path, a first one of the corona-discharge electrodes being proximate the nitrogen emersion orifice of the nozzle, a second of the corona-discharge electrodes being spaced from the nitrogen emersion orifice of the nozzle and the first one of the corona-discharge electrodes, a skimmer located downstream of the nozzle in the direction of nitrogen flow, the skimmer defining an opening to collimate a beam of activated nitrogen molecules passing therethrough, at least one chamber downstream of the skimmer, means for evacuating the chamber to draw off gases other than the activated nitrogen molecules prior to the activated nitrogen molecules reaching the substrate.
 14. The apparatus according to claim 13, wherein the at least one chamber comprises one of a plurality of succeeding chambers with means for evacuating each of the succeeding chambers to draw off gases other than the activated nitrogen molecules passing therethrough towards the substrate.
 15. The apparatus according to claim 14, wherein the nozzle comprises a restricted end of a tube, the tube being in the nitrogen delivery path, the first one of the corona-discharge electrodes being located within the tube, and the second of the corona discharge electrodes being located outside the tube, the nitrogen emergent from the tube into a corona discharge between the electrodes forming with the corona discharge a corona discharge supersonic free-jet.
 16. The apparatus according to claim 15, wherein the second of the corona discharge electrodes is generally annular and surrounds the restricted end of the tube.
 17. The apparatus according to claim 15, wherein the second of the corona discharge electrodes is downstream of the restricted end of the tube in the direction of nitrogen flow.
 18. The apparatus according to claim 17, wherein the skimmer serves as the second of the corona discharge electrodes.
 19. In a semiconductor manufacturing process, a method of applying a layer to a substrate comprising at least a semiconductor stratum; the method comprising: (a) directing onto the substrate an activated molecule comprising at least: (i) a first atom operative chemically to bond to an element at the substrate, and (ii) a second atom operative to disassociate and leave the substrate removing heat caused by a reaction between the first atom and at least one substrate constituent in so-doing.
 20. A method of forming a multi-layer semiconductor constituent comprising: (a) providing a target substrate comprising at least a stratum of semiconductor material, (b) producing a beam at least partially comprised of metastable activated nitrogen molecules, and (c) impacting a surface of the target substrate with the beam of metastable activated nitrogen molecules.
 21. The method according to claim 20, wherein the beam of metastable activated nitrogen molecules comprises diatomic nitrogen molecules.
 22. The method according to claim 21, wherein step (c) comprises binding a first atom of the diatomic nitrogen molecules with at least one further element at the surface of the substrate in an exothermic reaction and releasing the heat of the exothermic reaction by release of a second atom of the diatomic nitrogen molecules.
 23. The method according to claim 20 or 22, wherein the diatomic molecule is of the form N₂A³Σ_(u) ⁺.
 24. The method according to one of claims 20 through 22, wherein step (c) includes reacting the metastable activated molecule with a group III metal.
 25. The method according to one of claims 20 through 22, wherein step (c) includes reacting the metastable activated nitrogen molecule with at least one of an element chosen from group consisting of Al, Ga and In.
 26. The method according to one of claims 20 through 22, wherein step (a) comprises providing a substrate having a semiconductor stratum and an oxide layer, and step (c) comprises impacting the oxide layer with the beam of metastable activated nitrogen molecules.
 27. The method according to any one of claims 20 through 22, wherein step (b) comprises producing the beam by introducing nitrogen in a corona discharge supersonic free-jet directed at the target substrate.
 28. In a semiconductor manufacturing process, a method of applying a nitride layer to a substrate comprising at least a stratum of semiconductive material, including the steps of: (a) directing a beam of metastable activated nitrogen molecules onto the substrate by: (i) providing a corona discharge supersonic free-jet source (CD-SFJ); (ii) supplying nitrogen to the CD-SFJ to produce the metastable activated nitrogen molecule beam; (iii) locating the substrate in the path of the beam; and (iv) introducing at least one further element operative in association with the activated nitrogen molecules to produce a nitride layer on the substrate.
 29. A method of producing a film on a semiconductor substrate comprising: (a) establishing in a vacuumized location a corona discharge across a set of corona discharge electrodes, (b) creating a flow of diatomic, activated, metastable nitrogen molecules by directing pressurized nitrogen gas through a nozzle into the plasma discharge, (c) collimating the flow of activated nitrogen molecules, (d) positioning the semiconductor substrate in the collimatic flow of activated nitrogen molecules, (e) reacting the activated nitrogen molecules with at least one other element at a surface of the substrate to grow a nitride layer on the surface by: (i) exothermic reaction of one atom of each molecule thus reacting, and (ii) disassociating a further atom and the one atom of each molecule thus reacting to dissipate the heat produced in the exothermic reaction.
 30. The method according to claim 29, wherein step (b) includes pressurizing the nitrogen gas to a stagnation pressure of substantially 200 torr or greater.
 31. The method according to claim 30, wherein step (a) comprises establishing the corona discharge at a location vacuumized to a pressure of less than 1×10 torr.
 32. The method according to any one of claims 29 through 31, wherein step (b) further comprises creating in the corona discharge nitrogen molecules substantially only of the excited form N₂A³Σ_(u) ⁺ and the ground state form N₂X¹Σ_(g) ⁺.
 33. The method according to any one of claims 29 through 31, further comprising directing at least one further stream of collimated diatomic, activated, metastable nitrogen molecules to the surface of the substrate by concurrently performing the steps (a) to (d) by directing nitrogen gas under pressure to at least one further nozzle.
 34. The method according to claim 29, further comprising the step of elevating the temperature of the substrate at least several hundred celsius degrees above ambient.
 35. The method according to claim 34, wherein the step of raising the temperature of the substrate comprises raising the temperature to a temperature in the range from about 600° C. to about 900° C.
 36. Apparatus for producing a film on a semiconductor substrate comprising: (a) means for establishing a vacuumized environment, (b) means for establishing a corona discharge in the vacuumized environment, (c) means for creating a supersonic flow of nitrogen gas into the corona discharge to create a supersonic jet of diatomic, activated metastable nitrogen molecules, (d) means for collimating the jet of nitrogen molecules, and (e) means for locating a target semiconductor substrate in the path of the collimated jet of nitrogen particles.
 37. The apparatus according to claim 36, further comprising means for withdrawing background gases from around the collimated jet of nitrogen molecules.
 38. The apparatus according to claim 36, further comprising means for supplying a group III metal to react with the nitrogen molecules at a surface of the substrate to grow a group III metal nitride film on the surface. 